arXiv · 1811.12179
MRAM Co-designed Processing-in-Memory CNN Accelerator for Mobile and IoT Applications
Abstract
We designed a device for Convolution Neural Network applications with non-volatile MRAM memory and computing-in-memory co-designed architecture. It has been successfully fabricated using 22nm technology node CMOS Si process. More than 40MB MRAM density with 9.9TOPS/W are provided. It enables multiple models within one single chip for mobile and IoT device applications.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Baohua Sun, Daniel Liu, Leo Yu, Jay Li, Helen Liu, Wenhan Zhang, Terry Torng. 2018-11-26. MRAM Co-designed Processing-in-Memory CNN Accelerator for Mobile and IoT Applications. https://arxiv.org/abs/1811.12179
Cite the original work for its findings. Save a collection to share your selection of sources.