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arXiv · 1811.04002

Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

X. Xue·T. F. Watson·J. Helsen·D. R. Ward·D. E. Savage·M. G. Lagally·S. N. Coppersmith·M. A. Eriksson·S. Wehner·L. M. K. Vandersypen
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Abstract

We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.

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X. Xue, T. F. Watson, J. Helsen, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, S. Wehner, L. M. K. Vandersypen. 2018-11-09. Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device. https://doi.org/10.1103/physrevx.9.021011

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