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arXiv · 1811.02758

Linear magnetoresistance in the low-field limit in density-wave materials

Yejun Feng·Yishu Wang·D. M. Silevitch·J. -Q. Yan·Riki Kobayashi·Masato Hedo·Takao Nakama·Yoshichika Ōnuki·A. V. Suslov·B. Mihaila·P. B. Littlewood·T. F. Rosenbaum
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Abstract

The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2], and inhomogeneities that lead to wandering current paths [3, 4] can induce a crossover from quadratic to linear magnetoresistance with increasing magnetic field. Here we explore a series of metallic charge- and spin-density-wave systems that exhibit extremely large positive linear magnetoresistance. By contrast to other linear MR mechanisms, this effect remains robust down to miniscule magnetic fields of tens of Oersted at low temperature. We frame an explanation of this phenomenon in a semi-classical narrative for a broad category of materials with partially-gapped Fermi surfaces due to density waves.

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Yejun Feng, Yishu Wang, D. M. Silevitch, J. -Q. Yan, Riki Kobayashi, Masato Hedo, Takao Nakama, Yoshichika Ōnuki, A. V. Suslov, B. Mihaila, P. B. Littlewood, T. F. Rosenbaum. 2018-11-07. Linear magnetoresistance in the low-field limit in density-wave materials. https://doi.org/10.1073/pnas.1820092116

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