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arXiv · 1811.01390

Single layer MoS2 nanoribbon field effect transistor

D. Kotekar-Patil·J. Deng·S. L. Wong·Chit Siong Lau·Kuan Eng Johnson Goh
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Abstract

We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5V/dec using a global backgate. Moreover, we measure a high current density of 38 uA/um resulting in high on/off ratio of the order of 10^5. We observe mobility reaching as high as 50 cm^2/V.s with increasing source-drain bias.

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D. Kotekar-Patil, J. Deng, S. L. Wong, Chit Siong Lau, Kuan Eng Johnson Goh. 2018-11-04. Single layer MoS2 nanoribbon field effect transistor. https://doi.org/10.1063/1.5079860

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