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arXiv · 1810.04373

Gapped Nearly Free-Standing Graphene on an SiC(0001) Substrate Induced by Manganese Atoms

Jinwoong Hwang·Ji-Eun Lee·Minhee Kang·Byeong-Gyu Park·Jonathan Denlinger·Sung-Kwan Mo·Choongyu Hwang
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Abstract

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases, approaching the electron band structure calculated using the local density approximation method. While the former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition, the latter suggests that its electronic correlations can be modified by foreign atoms. These results pave the way for promising device applications using graphene that is semiconducting and charge neutral.

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Jinwoong Hwang, Ji-Eun Lee, Minhee Kang, Byeong-Gyu Park, Jonathan Denlinger, Sung-Kwan Mo, Choongyu Hwang. 2018-10-10. Gapped Nearly Free-Standing Graphene on an SiC(0001) Substrate Induced by Manganese Atoms. https://arxiv.org/abs/1810.04373

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