arXiv ScienceSearch

arXiv · 1810.02432

Spectral redshift of the thermal near field scattered by a probe

Abstract

The physics underlying spectral redshift of thermally generated surface phonon-polaritons (SPhPs) observed in near-field thermal spectroscopy is investigated. Numerically exact fluctuational electrodynamics simulations of the thermal near field emitted by a silicon carbide surface scattered in the far zone by an intrinsic silicon probe show that SPhP resonance redshift is a physical phenomenon. A maximum SPhP redshift of 19 cm-1 is predicted for a 200-nm-diameter hemispherical probing tip and a vacuum gap of 10 nm. Resonance redshift is mediated by electromagnetic gap modes excited in the vacuum gap separating the probe and the surface when the probing tip is much larger than the gap size. The impact of gap modes on the scattered field can be mitigated with a probing tip size approximately equal to or smaller than the vacuum gap. However, sharp probing tips induce important spectral broadening of the scattered field. It is also demonstrated that a dipole approximation with multiple reflections cannot be used for explaining the physics and predicting the amount of redshift in near-field thermal spectroscopy. This work shows that the scattered field in the far zone is a combination of the thermal near field emitted by the surface, and electromagnetic interactions between the probe and the surface. Spectroscopic analysis of near-field thermal emission thus requires a numerically exact fluctuational electrodynamics framework for modeling probe-surface interactions.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Sheila Edalatpour, Vahid Hatamipour, Mathieu Francoeur. 2019-01-24. Spectral redshift of the thermal near field scattered by a probe. https://doi.org/10.1103/physrevb.99.165401

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph