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arXiv · 1809.10748

Epitaxial Growth and Electrical Properties of VO2 on LSAT (111) substrate

Yang Liu·Shanyuan Niu·Thomas Orvis·Haimang Zhang·Han Wang·Jayakanth Ravichandran
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Abstract

We report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition (MIT), of vanadium dioxide (VO2) thin films synthesized on LSAT (111) ([LaAlO3]0.3[Sr2AlTaO6]0.7) substrates by pulsed laser deposition. X-ray diffraction studies show that the epitaxial relationship between the VO2 thin films and LSAT substrate is given as VO2(020)||LSAT(111) and VO2[001]||LSAT[11-2]. We observed a sharp four orders of magnitude change in the longitudinal resistance for the VO2 thin films around the transition temperature. We also measured distinct Raman spectra below and above the transition point indicating a concomitant structural transition between the insulator and metallic phases, in agreement with past investigations.

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Yang Liu, Shanyuan Niu, Thomas Orvis, Haimang Zhang, Han Wang, Jayakanth Ravichandran. 2018-09-27. Epitaxial Growth and Electrical Properties of VO2 on LSAT (111) substrate. https://doi.org/10.1116/1.5045358

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