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arXiv · 1809.07958

Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC

F. C. Bocquet·Y. -R. Lin·M. Franke·N. Samiseresht·S. Parhizkar·S. Soubatch·T. -L. Lee·C. Kumpf·F. S. Tautz
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Abstract

We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a pre-oriented template to induce the unconventional orientation. Using spot profile analysis low energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently-bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.

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F. C. Bocquet, Y. -R. Lin, M. Franke, N. Samiseresht, S. Parhizkar, S. Soubatch, T. -L. Lee, C. Kumpf, F. S. Tautz. 2018-09-21. Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC. https://doi.org/10.1103/physrevlett.125.106102

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