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arXiv · 1809.04513

Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces

C. C. Chen·K. H. M. Chen·Y. T. Fanchiang·C. C. Tseng·S. R. Yang·C. N. Wu·M. X. Guo·C. K. Cheng·C. T. Wu·M. Hong·J. Kwo
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Abstract

The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with a Se-buffered low-temperature (SBLT) growth technique. We demonstrated a streaky reflection high-energy electron diffraction pattern starting from the very first quintuple layer of Bi2Se3, indicating the high-quality interface between TmIG and Bi2Se3, a prerequisite for studying interfacial exchange coupling effects. The strong interfacial exchange interaction was manifested by observations of anomalous Hall effect in the Bi2Se3/TmIG bilayer and a shift of ferromagnetic resonance field of TmIG induced by Bi2Se3. We have reproducibly grown high-quality Bi2Se3/ReIG and interfaces using this new TI growth method, which may be applied to grow other types of van der Waals (vdW) hetero-structures.

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C. C. Chen, K. H. M. Chen, Y. T. Fanchiang, C. C. Tseng, S. R. Yang, C. N. Wu, M. X. Guo, C. K. Cheng, C. T. Wu, M. Hong, J. Kwo. 2018-09-12. Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces. https://doi.org/10.1063/1.5054329

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