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arXiv · 1809.02806

Growth and Raman spectroscopy of thickness-controlled rotationally faulted multilayer graphene

H. Kato·N. Itagaki·H. J. Im
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Abstract

We report the growth of thickness-controlled rotationally faulted multilayer graphene (rf-MLG) on Ni foils by low-pressure chemical vapor deposition and their characterization by micro-Raman spectroscopy. The surface morphology and thickness were investigated by scanning electron microscope, X-ray diffraction, and transmittance measurements. These results have revealed that the thickness of rf-MLG can be effectively controlled by the thickness of the Ni foil rather than the flow rate of CH$_4$, H$_2$, Ar. In the Raman spectroscopy measurements, we observed most Raman peaks of the graphitic materials. Raman spectra can be categorized into four patterns and show systematic behaviors. Especially, the in-plane (~1880 cm$^{-1}$, ~2035 cm$^{-1}$) and out-of-plane (~1750 cm$^{-1}$) modes are successfully analyzed to explain the dimensionality of rf-MLG as in the twisted (or rotated) bilayer graphene. In addition, it is found that the two peaks at ~1230 cm$^{-1}$ and ~2220 cm$^{-1}$ well reflect the properties of the in-plane mode. The peak intensities of the above four in-plane modes are proportional to that of 2D band, indicating that they share the common Raman resonance process.

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H. Kato, N. Itagaki, H. J. Im. 2018-09-08. Growth and Raman spectroscopy of thickness-controlled rotationally faulted multilayer graphene. https://doi.org/10.1016/j.carbon.2018.09.017

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