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arXiv · 1808.08620

Phonon-induced linewidths of graphene electronic states

B. Hellsing·T. Frederiksen·F. Mazzola·T. Balasubramanian·J. Wells
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Abstract

The linewidths of the electronic bands originating from the electron-phonon coupling in graphene are analyzed based on model tight-binding calculations and experimental angle-resolved photoemission spectroscopy (ARPES) data. Our calculations confirm the prediction that the high-energy optical phonons provide the most essential contribution to the phonon-induced linewidth of the two upper occupied $\sigma$ bands near the $\bar{\Gamma}$-point. For larger binding energies of these bands, as well as for the $\pi$ band, we find evidence for a substantial lifetime broadening from interband scattering $\pi \rightarrow \sigma$ and $\sigma \rightarrow \pi$, respectively, driven by the out-of-plane ZA acoustic phonons. The essential features of the calculated $\sigma$ band linewidths are in agreement with recent published ARPES data [F. Mazzola et al., Phys.~Rev.~B. 95, 075430 (2017)] and of the $\pi$ band linewidth with ARPES data presented here.

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B. Hellsing, T. Frederiksen, F. Mazzola, T. Balasubramanian, J. Wells. 2018-08-26. Phonon-induced linewidths of graphene electronic states. https://doi.org/10.1103/physrevb.98.205428

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