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arXiv · 1808.07818

Spin field-effect transistor in a quantum spin-Hall device

R. Battilomo·N. Scopigno·C. Ortix
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Abstract

We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin polarized currents: when ferromagnetic leads are coupled to the quantum spin-Hall device, the ballistic conductance is modulated by the Rashba strength. Therefore, by tuning the Rashba interaction via an all-electric gating, it is possible to control the spin polarization of injected electrons.

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R. Battilomo, N. Scopigno, C. Ortix. 2018-08-23. Spin field-effect transistor in a quantum spin-Hall device. https://doi.org/10.1103/physrevb.98.075147

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