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arXiv · 1807.10523

Competing Fractional Quantum Hall and Electron Solid Phases in Graphene

Shaowen Chen·Rebeca Ribeiro-Palau·Kang Yang·Kenji Watanabe·Takashi Taniguchi·James Hone·Mark O. Goerbig·Cory R. Dean
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Abstract

We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between incompressible fractional quantum Hall states, and electron solid phases. The tunability of graphene allows us to measure the $B$-$T$ phase diagram of the electron-solid phase. The hierarchy of reentrant states suggest spin and valley degrees of freedom play a role in determining the ground state energy. We find that the melting temperature scales with magnetic field, and construct a phase diagram of the electron liquid-solid transition.

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Shaowen Chen, Rebeca Ribeiro-Palau, Kang Yang, Kenji Watanabe, Takashi Taniguchi, James Hone, Mark O. Goerbig, Cory R. Dean. 2018-07-27. Competing Fractional Quantum Hall and Electron Solid Phases in Graphene. https://doi.org/10.1103/physrevlett.122.026802

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