Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

John Anders; Mathieu Benoit; Saverio Braccini; Raimon Casanova; Hucheng Chen; Kai Chen; Francesco Armando di Bello; Armin Fehr; Didier Ferrere; Dean Forshaw; Tobias Golling; Sergio Gonzalez-Sevilla; Giuseppe Iacobucci; Moritz Kiehn; Francesco Lanni; Hongbin Liu; Lingxin Meng; Claudia Merlassino; Antonio Miucci; Marzio Nessi; Ivan Perić; Marco Rimoldi; D M S Sultan; Mateus Vincente Barreto Pinto; Eva Vilella; Michele Weber; Weihao Wu; Lailin Xu; Ettore Zaffaroni

doi:10.1088/1748-0221/13/10/p10004

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arXiv · 1807.09553

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

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Abstract

This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

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John Anders, Mathieu Benoit, Saverio Braccini, Raimon Casanova, Hucheng Chen, Kai Chen, Francesco Armando di Bello, Armin Fehr, Didier Ferrere, Dean Forshaw, Tobias Golling, Sergio Gonzalez-Sevilla, Giuseppe Iacobucci, Moritz Kiehn, Francesco Lanni, Hongbin Liu, Lingxin Meng, Claudia Merlassino, Antonio Miucci, Marzio Nessi, Ivan Perić, Marco Rimoldi, D M S Sultan, Mateus Vincente Barreto Pinto, Eva Vilella, Michele Weber, Weihao Wu, Lailin Xu, Ettore Zaffaroni. 2018-07-25. Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation. https://doi.org/10.1088/1748-0221/13/10/p10004

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