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arXiv · 1807.08843

Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell

Ryo Matsumoto·Hiroshi Hara·Hiromi Tanaka·Kazuki Nakamura·Noriyuki Kataoka·Sayaka Yamamoto·Aichi Yamashita·Shintaro Adachi·Tetsuo Irifune·Hiroyuki Takeya·Yoshihiko Takano
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Abstract

Sulfur-doped SnSe single crystal was successfully synthesized using a melt and slow-cooling method. The chemical composition and valence state of the obtained sample were analyzed by X-ray photoelectron spectroscopy. The pressure range of a diamond anvil cell with boron-doped diamond electrodes was upgraded to 104 GPa using nano-polycrystalline diamond anvil to investigate a pressure effect for the sample. Electrical resistivity measurements of sulfur-doped SnSe single crystal showed the insulator-metal-superconductor transition by applying high pressure up to 75.9 GPa.

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Ryo Matsumoto, Hiroshi Hara, Hiromi Tanaka, Kazuki Nakamura, Noriyuki Kataoka, Sayaka Yamamoto, Aichi Yamashita, Shintaro Adachi, Tetsuo Irifune, Hiroyuki Takeya, Yoshihiko Takano. 2018-07-23. Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell. https://doi.org/10.7566/jpsj.87.124706

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