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arXiv · 1807.01757

Thermal and transport properties of U3Si2

Daniel J. Antonio·Keshav Shrestha·Jason M. Harp·Cynthia A. Adkins·Yongfeng Zhang·Jon Carmack·Krzysztof Gofryk
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Abstract

We have studied U_3Si_2 by means of the heat capacity, electrical resistivity, Seebeck and Hall effects, and thermal conductivity in the temperature range 2-300 K and in magnetic fields up to 9 T. All the results obtained point to delocalized nature of 5f-electrons in this material. The low temperature heat capacity is enhanced (gamma_el ~ 150 mJ/mol-K2) and shows an upturn in Cp/T (T), characteristic of spin fluctuations. The thermal conductivity of U3Si2 is ~8.5 W/m-K at room temperature and we show that the electronic part dominates heat transport above 300 K as expected for a metallic system, although the lattice contribution cannot be completely neglected.

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Daniel J. Antonio, Keshav Shrestha, Jason M. Harp, Cynthia A. Adkins, Yongfeng Zhang, Jon Carmack, Krzysztof Gofryk. 2018-07-04. Thermal and transport properties of U3Si2. https://doi.org/10.1016/j.jnucmat.2018.05.036

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