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arXiv · 1806.10515

Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths

A. V. Mikhailov·V. V. Belykh·D. R. Yakovlev·P. S. Grigoryev·J. P. Reithmaier·M. Benyoucef·M. Bayer
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Abstract

We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As/InP quantum dots with emission wavelengths around $1.5$~$μ$m by pump-probe Faraday rotation spectroscopy. Electron spin dephasing due to the randomly oriented nuclear Overhauser fields is observed. At low temperatures we find a sub-microsecond longitudinal electron spin relaxation time $T_1$ which unexpectedly strongly depends on temperature. At high temperatures the electron spin relaxation time is limited by optical phonon scattering through spin-orbit interaction decreasing down to $0.1$~ns at 260~K. We show that the hole spin relaxation is activated much more effectively by a temperature increase compared to the electrons.

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A. V. Mikhailov, V. V. Belykh, D. R. Yakovlev, P. S. Grigoryev, J. P. Reithmaier, M. Benyoucef, M. Bayer. 2018-12-29. Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths. https://doi.org/10.1103/physrevb.98.205306

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