arXiv · 1806.03061
A topological material in the III-V family: heteroepitaxial InBi on InAs
Abstract
InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hopping terms, and no Bi-In interaction, gives a deeper insight into the spin texture.
Explore related subjects
Keep this discovery
Laurent Nicolaï, Ján Minár, Maria Christine Richter, Uros Djukic, Olivier Heckmann, Jean-Michel Mariot, Johan Adell, Mats Leandersson, Janusz Sadowski, Jürgen Braun, Hubert Ebert, Jonathan D. Denlinger, Ivana Vobornik, Jun Fujii, Pavol Šutta, Gavin R. Bell, Martin Gmitra, Karol Hricovini. 2018-06-08. A topological material in the III-V family: heteroepitaxial InBi on InAs. https://arxiv.org/abs/1806.03061
Cite the original work for its findings. Save a collection to share your selection of sources.