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arXiv · 1806.01795

Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields

V. T. Dolgopolov·M. Yu. Melnikov·A. A. Shashkin·S. -H. Huang·C. W. Liu·S. V. Kravchenko
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Abstract

We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers $p$ = 1, 2, 3, and 4. Minima with $p$ = 3 disappear in magnetic fields below 7 Tesla, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors $ν$ = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions.

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V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko. 2018-06-05. Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields. https://doi.org/10.1134/s0021364018120019

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