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arXiv · 1805.07850

Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce)

Yosuke Goto·Akira Miura·Ryosuke Sakagami·Yoichi Kamihara·Chikako Moriyoshi·Yoshihiro Kuroiwa·Yoshikazu Mizuguchi
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Abstract

Inspired by the recent first-principles calculations showing the high thermoelectric performance of layered pnictogen chalcogenides, we experimentally characterise the crystal structure and high-temperature transport properties of the layered antimony selenides REOSbSe2 (RE = La, Ce). The crystal structure of REOSbSe2 was the tetragonal P4/nmm space group, consisting of alternate stacks of SbSe2 and REO layers. These two compounds were n-type semiconductors. The optical band gaps of LaOSbSe2 and CeOSbSe2 were evaluated to be 1.0 and 0.6 eV, respectively. The room-temperature thermal conductivity was 1.5 Wm-1K-1 for RE = La and 0.8 Wm-1K-1 for RE = Ce. These relatively low thermal conductivities were comparable to those of isostructural layered bismuth chalcogenides. We substituted O2- with F- ions to introduce electrons as charged carriers to optimize the thermoelectric performance, but increasing the electrical conductivity was still challenging.

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Yosuke Goto, Akira Miura, Ryosuke Sakagami, Yoichi Kamihara, Chikako Moriyoshi, Yoshihiro Kuroiwa, Yoshikazu Mizuguchi. 2018-05-21. Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce). https://doi.org/10.7566/jpsj.87.074703

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