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arXiv · 1805.07332

Origin of magnetoresistance suppression in thin $\gamma$-MoTe$_2$

Shazhou Zhong·Archana Tiwari·George Nichols·Fangchu Chen·Xuan Luo·Yuping Sun·Adam W. Tsen
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Abstract

We use both classical magnetotransport and quantum oscillation measurements to study the thickness evolution of the extremely large magnetoresistance (XMR) material and type-II Weyl semimetal candidate, $\gamma$-MoTe$_2$, protected from oxidation. We find that the magnetoresistance is systematically suppressed with reduced thickness. This occurs concomitantly with both a decrease in carrier mobility and increase in electron-hole imbalance. We model the two effects separately and conclude that the XMR effect is more sensitive to the former.

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Shazhou Zhong, Archana Tiwari, George Nichols, Fangchu Chen, Xuan Luo, Yuping Sun, Adam W. Tsen. 2018-05-18. Origin of magnetoresistance suppression in thin $\gamma$-MoTe$_2$. https://doi.org/10.1103/physrevb.97.241409

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