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arXiv · 1805.01841

Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films

C. Zucchetti·M. -T Dau·F. Bottegoni·C. Vergnaud·T. Guillet·A. Marty·C. Beigné·S. Gambarelli·A. Picone·A. Calloni·G. Bussetti·A. Brambilla·L. Duò·F. Ciccacci·P. K. Das·J. Fujii·I. Vobornik·M. Finazzi·M. Jamet
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Abstract

Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a large conversion efficiency, the scalability down to the nanometer scale and the integrability with opto-electronic and spintronic devices. Here we show that, when an ultrathin Bi film is epitaxially grown on top of a Ge(111) substrate, quantum size effects arising in nanometric Bi islands drastically boost the SCI efficiency, even at room temperature. Using x-ray diffraction (XRD), scanning tunneling microscopy (STM) and spin- and angle-resolved photoemission (S-ARPES) we obtain a clear picture of the film morphology, crystallography and electronic structure. We then exploit the Rashba-Edelstein effect (REE) and inverse Rashba-Edelstein effect (IREE) to directly quantify the SCI efficiency using optical and electrical spin injection.

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C. Zucchetti, M. -T Dau, F. Bottegoni, C. Vergnaud, T. Guillet, A. Marty, C. Beigné, S. Gambarelli, A. Picone, A. Calloni, G. Bussetti, A. Brambilla, L. Duò, F. Ciccacci, P. K. Das, J. Fujii, I. Vobornik, M. Finazzi, M. Jamet. 2018-05-04. Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films. https://doi.org/10.1103/physrevb.98.184418

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