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arXiv · 1804.09297

High-Field Magnetoresistance of Organic Semiconductors

G. Joshi·M. Y. Teferi·S. Jamali·M. Groesbeck·J. van Tol·R. McLaughlin·Z. V. Vardeny·J. M. Lupton·H. Malissa·C. Boehme
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Abstract

The magneto-electronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge carrier pairs due to small differences in their Landé g-factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multi-frequency continuous-wave electrically detected magnetic resonance experiments. The measurements were performed on identical devices under similar conditions in order to independently assess the magnetic field-dependent spin-mixing mechanism, the so-called Δg mechanism, which originates from differences in the charge-carrier g-factors induced by spin-orbit coupling.

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G. Joshi, M. Y. Teferi, S. Jamali, M. Groesbeck, J. van Tol, R. McLaughlin, Z. V. Vardeny, J. M. Lupton, H. Malissa, C. Boehme. 2018-04-25. High-Field Magnetoresistance of Organic Semiconductors. https://doi.org/10.1103/physrevapplied.10.024008

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