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arXiv · 1804.02131

Crystal Growth and Characterization of Bulk Sb2Te3Topological Insulator

Rabia Sultana·Ganesh Gurjar·S. Patnaik·V. P. S. Awana
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Abstract

The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 C), followed by slow cooling (2 C per hour).The weak anti localization (WAL) related low field (2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami- Larkin - Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI) and its brief physical property characterization.

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Rabia Sultana, Ganesh Gurjar, S. Patnaik, V. P. S. Awana. 2018-04-06. Crystal Growth and Characterization of Bulk Sb2Te3Topological Insulator. https://arxiv.org/abs/1804.02131

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