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arXiv · 1804.01604

Ultra-high Vacuum Deposition of Higher Manganese Silicide Mn4Si7 Thin Films

Rajendra P Dulal·Bishnu R Dahal·Ian L Pegg·John Philip
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Abstract

We have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultra-high vacuum deposition with a base pressure of 1x10-9 torr. The thickness of the film was varied from 65-100 nm. These films exhibit a tetragonal crystal structure and display paramagnetic behavior as predicted for the stoichiometric Mn4Si7 system. They have a resistivity of 3.321 x 10-5 ohm-m at room temperature and show a semi-metallic nature.

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Rajendra P Dulal, Bishnu R Dahal, Ian L Pegg, John Philip. 2018-04-04. Ultra-high Vacuum Deposition of Higher Manganese Silicide Mn4Si7 Thin Films. https://arxiv.org/abs/1804.01604

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