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arXiv · 1803.08187

Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices

Y. Fujita·M. Yamada·M. Tsukahara·T. Naito·S. Yamada·S. Oki·K. Sawano·K. Hamaya
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Abstract

We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the local spin-accumulation signal can show nonmonotonic variations, including a sign inversion. A part of the nonmonotonic features can be understood qualitatively by considering the rapid reduction in the spin polarization of the FM/SC interfaces with increasing bias voltage. In addition to the sign inversion of the FM/SC interface spin polarization, the influence of the spin-drift effect in the SC layer and the nonlinear electrical spin conversion at a biased FM/SC contact are discussed.

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Y. Fujita, M. Yamada, M. Tsukahara, T. Naito, S. Yamada, S. Oki, K. Sawano, K. Hamaya. 2019-08-15. Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices. https://doi.org/10.1103/physrevb.100.024431

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