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arXiv · 1803.05585

Doping-induced magnetism in the semiconducting B20 compound RuGe

Mojammel A. Khan·D. P. Young·P. W. Adams·D. Browne·D. M. Gautreau·W. Adam Phelan·Huibo Cao·J. F. DiTusa
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Abstract

RuGe, a diamagnetic small-band gap semiconductor, and CoGe, a nonmagnetic semimetal, are both isostructural to the Kondo insulator FeSi and the skyrmion lattice host MnSi. Here, we have explored the magnetic and transport properties of Co-doped RuGe: Ru$_{1-x}$Co$_x$Ge. For small values of $x$, a magnetic ground state emerges with $T_{c}\approx$ 5 $-$ 9 K, which is accompanied by a moderate decrease in electrical resistivity and a Seebeck coefficient that indicates electron-like charge carriers. The magnetization, magnetoresistance, and the specific heat capacity all resemble that of Fe$_{1-x}$Co$_x$Si for similar Co substitution levels, suggesting that Ru$_{1-x}$Co$_x$Ge hosts equally as interesting magnetic and charge carrier transport properties.

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Mojammel A. Khan, D. P. Young, P. W. Adams, D. Browne, D. M. Gautreau, W. Adam Phelan, Huibo Cao, J. F. DiTusa. 2018-03-15. Doping-induced magnetism in the semiconducting B20 compound RuGe. https://arxiv.org/abs/1803.05585

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