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arXiv · 1803.05168

A 1.6:1 Bandwidth Two-Layer Antireflection Structure for Silicon Matched to the 190-310 GHz Atmospheric Window

Fabien Defrance·Cecile Jung-Kubiak·Jack Sayers·Jake Connors·Clare deYoung·Matthew I. Hollister·Hiroshige Yoshida·Goutam Chattopadhyay·Sunil R. Golwala·Simon J. E. Radford
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Abstract

Although high-resistivity, low-loss silicon is an excellent material for THz transmission optics, its high refractive index necessitates antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting subwavelength structures into the silicon surface using multi-depth deep reactive ion etching (DRIE). A wafer with this treatment on both sides has <-20 dB (<1%) reflectance over 190-310 GHz. We also demonstrated that bonding wafers introduces no reflection features above the -20 dB level, reproducing previous work. Together these developments immediately enable construction of wide-bandwidth silicon vacuum windows and represent two important steps toward gradient-index silicon optics with integral broadband antireflection treatment.

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Fabien Defrance, Cecile Jung-Kubiak, Jack Sayers, Jake Connors, Clare deYoung, Matthew I. Hollister, Hiroshige Yoshida, Goutam Chattopadhyay, Sunil R. Golwala, Simon J. E. Radford. 2018-03-14. A 1.6:1 Bandwidth Two-Layer Antireflection Structure for Silicon Matched to the 190-310 GHz Atmospheric Window. https://doi.org/10.1364/ao.57.005196

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