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arXiv · 1803.02226

Epitaxial UN and $α$-U$_2$N$_3$ Thin Films

E. Lawrence Bright·S. Rennie·M. Cattelan·N. A. Fox·D. T. Goddard·R. Springell
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Abstract

Single crystal epitaxial thin films of UN and U$_2$N$_3$ have been grown for the first time by reactive DC magnetron sputtering. These films provide ideal samples for fundamental research into the potential accident tolerant fuel, UN, and U$_2$N$_3$, its intermediate oxidation product. Films were characterised using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS), with XRD analysis showing both thin films to be [001] oriented and composed of a single domain. The specular lattice parameters of the UN and U$_2$N$_3$ films were found to be 4.895\,Å and 10.72\,Å, respectively, with the UN film having a miscut of 2.6\,$^\circ$. XPS showed significant differences in the N-1s peak between the two films, with area analysis showing both films to be stoichiometric.

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E. Lawrence Bright, S. Rennie, M. Cattelan, N. A. Fox, D. T. Goddard, R. Springell. 2018-03-06. Epitaxial UN and $α$-U$_2$N$_3$ Thin Films. https://arxiv.org/abs/1803.02226

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