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arXiv · 1801.07450

Pure spin current transport in a SiGe alloy

T. Naito·M. Yamada·M. Tsukahara·S. Yamada·K. Sawano·K. Hamaya
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Abstract

Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si$_{\rm 0.1}$Ge$_{\rm 0.9}$, we study pure spin current transport in a degenerate SiGe alloy ($n \sim$ 5.0 $\times$ 10$^{18}$ cm$^{-3}$). Clear nonlocal spin-valve signals and Hanle-effect curves, indicating generation, manipulation, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si$_{\rm 0.1}$Ge$_{\rm 0.9}$ layer at low temperatures are reliably estimated to be $\sim$ 0.5 $\mu$m and $\sim$ 0.2 ns, respectively. This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys.

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T. Naito, M. Yamada, M. Tsukahara, S. Yamada, K. Sawano, K. Hamaya. 2018-01-23. Pure spin current transport in a SiGe alloy. https://doi.org/10.7567/apex.11.053006

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