Hole Mobility Model for Si Double-Gate Junctionless Transistors

Fan Chen; Kangliang Wei; Wei E. I. Sha; Jun Z. Huang

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arXiv · 1801.06526

Hole Mobility Model for Si Double-Gate Junctionless Transistors

Fan Chen·Kangliang Wei·Wei E. I. Sha·Jun Z. Huang

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Abstract

In this work, a physics based model is developed to calculate the hole mobility of ultra-thin-body double-gate junctionless transistors. Six-band $k\cdot p$ Schrödinger equation and Poisson equation are solved self-consistently. The obtained wave-functions and energies are stored in look-up tables. Hole mobility can be derived using the Kubo-Greenwood formula accounting for impurity, acoustic and optical phonon, and surface roughness scattering. Initial benchmark results are shown.

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Fan Chen, Kangliang Wei, Wei E. I. Sha, Jun Z. Huang. 2017-11-18. Hole Mobility Model for Si Double-Gate Junctionless Transistors. https://arxiv.org/abs/1801.06526

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