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arXiv · 1801.00487

Full orientation control of epitaxial MoS2 on hBN assisted by substrate defects

Fu Zhang·Yuanxi Wang·Chad Erb·Ke Wang·Parivash Moradifar·Vincent Crespi·Nasim Alem
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Abstract

Inversion asymmetry in two-dimensional materials grants them fascinating properties such as spin-coupled valley degrees of freedom and piezoelectricity, but at the cost of inversion domain boundaries if the epitaxy of the grown 2D layer -- on a polar substrate -- cannot adequately distinguish what are often near-degenerate 0° and 180° orientations. We employ first-principles calculations to identify a method to lift this near-degeneracy: the energetic distinction between eclipsed and staggered configurations during nucleation at a point defect in the substrate. For monolayer MoS2 grown on hexagonal boron nitride, the predicted defect complex can be more stable than common MoS2 point defects because it is both a donor-acceptor pair and a Frenkel pair shared between adjacent layers of a 2D heterostack. Orientation control is verified in experiments that achieve ~90% consistency in the orientation of as-grown triangular MoS2 flakes on hBN, as confirmed by aberration-corrected scanning/transmission electron microscopy. This defect-enhanced orientational epitaxy could provide a general mechanism to break the near-degeneracy of 0/180° orientations of polar 2D materials on polar substrates, overcoming a long-standing impediment to scalable synthesis of single-crystal 2D semiconductors.

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Fu Zhang, Yuanxi Wang, Chad Erb, Ke Wang, Parivash Moradifar, Vincent Crespi, Nasim Alem. 2019-05-07. Full orientation control of epitaxial MoS2 on hBN assisted by substrate defects. https://doi.org/10.1103/physrevb.99.155430

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