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arXiv · 1801.00452

Gate-Tunable Quantum Dot in a High Quality Single Layer MoS$_{\mathrm{2}}$ Van der Waals Heterostructure

Riccardo Pisoni·Zijin Lei·Patrick Back·Marius Eich·Hiske Overweg·Yongjin Lee·Kenji Watanabe·Takashi Taniguchi·Thomas Ihn·Klaus Ensslin
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Abstract

We have fabricated an encapsulated monolayer MoS$_{\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\mathrm{2}}$/Vs at a density of 7 $\times$ 10$^{\mathrm{12}}$ cm$^{\mathrm{-2}}$ at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of the hBN we are able to confine electrons in MoS$_{\mathrm{2}}$ and observe the Coulomb blockade effect. By tuning the middle gate voltage we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.

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Riccardo Pisoni, Zijin Lei, Patrick Back, Marius Eich, Hiske Overweg, Yongjin Lee, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin. 2018-01-01. Gate-Tunable Quantum Dot in a High Quality Single Layer MoS$_{\mathrm{2}}$ Van der Waals Heterostructure. https://doi.org/10.1063/1.5021113

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