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arXiv · 1712.03419

Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures

Mihir Date·Sudipta Mukherjee·Joydeep Ghosh·Dipankar Saha·Swaroop Ganguly·Apurba Laha
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Abstract

We have addressed the existing ambiguity regarding the effect of process-induced strain in the underlying GaN layer on AlGaN/GaN heterostructure properties. The bandgaps and offsets for AlGaN on strained GaN are first computed using a cubic interpolation scheme within an empirical tight-binding framework. These are then used to calculate the polarization charge and two-dimensional electron gas density. Our bandstructure calculations show that it is not possible to induce any significant change in band offsets through strain in the GaN layer. The charge-density calculations indicate that such strain can, however, modulate the polarization charge and thereby enhance the 2DEG density at the AlGaN/GaN hetero-interface substantially, by as much as 25% for low Al mole fraction.

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Mihir Date, Sudipta Mukherjee, Joydeep Ghosh, Dipankar Saha, Swaroop Ganguly, Apurba Laha. 2017-12-09. Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures. https://doi.org/10.7567/1347-4065/ab39d0

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