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arXiv · 1711.06864

Engineering Hybrid Epitaxial InAsSb/Al Nanowire Materials for Stronger Topological Protection

Joachim E. Sestoft·Thomas Kanne·Aske Nørskov Gejl·Merlin von Soosten·Jeremy S. Yodh·Daniel Sherman·Brian Tarasinski·Michael Wimmer·Erik Johnson·Mingtang Deng·Jesper Nygård·Thomas Sand Jespersen·Charles M. Marcus·Peter Krogstrup
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Abstract

The combination of strong spin-orbit coupling, large $g$-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zincblende InAs$_{1-x}$Sb$_{x}$ nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies \cite{winkler2016topological}. We show that the epitaxial InAsSb/Al interfaces allows for a hard induced superconducting gap and 2$e$ transport in Coulomb charging experiments, similar to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective $g$-factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zincblende structure.

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Joachim E. Sestoft, Thomas Kanne, Aske Nørskov Gejl, Merlin von Soosten, Jeremy S. Yodh, Daniel Sherman, Brian Tarasinski, Michael Wimmer, Erik Johnson, Mingtang Deng, Jesper Nygård, Thomas Sand Jespersen, Charles M. Marcus, Peter Krogstrup. 2017-12-29. Engineering Hybrid Epitaxial InAsSb/Al Nanowire Materials for Stronger Topological Protection. https://doi.org/10.1103/physrevmaterials.2.044202

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