arXiv · 1711.01188
Kondo-Resonance Mediated Metal-Insulator Transition in GaAs Embedded with Erbium Arsenide Quantum Dots
Abstract
We report anomalous critical transport behavior in a GaAs structure containing a dense array of ErAs quantum dots. The structure displays a voltage (electric field)-controlled insulator-to-metal transition and strong hysteresis in the Kondo-like current-vs-temperature characteristic, with critical temperatures as high as 50 K. We attribute this behavior to a strong distributed Kondo resonance between the quantum dots after the Coulomb blockade of the array is lifted. This is consistent with a high sensitivity of the phase transition to a small external magnetic field that we have observed in the Voigt configuration, and a phenomenological model based on the RKKY interaction within a quantum dot and the cooperative Kondo-resonance amongst quantum dots.
Explore related subjects
Keep this discovery
W-D. Zhang, E. R. Brown, A. D. Feldman, T. E. Harvey, R. P. Mirin. 2017-11-03. Kondo-Resonance Mediated Metal-Insulator Transition in GaAs Embedded with Erbium Arsenide Quantum Dots. https://arxiv.org/abs/1711.01188
Cite the original work for its findings. Save a collection to share your selection of sources.