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arXiv · 1711.00957

Thermally-Induced Structural Evolution of Silicon- and Oxygen-Containing Hydrogenated Amorphous Carbon

Filippo Mangolini·James Hilbert·J. Brandon McClimon·Jennifer R. Lukes·Robert W. Carpick
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Abstract

The thermally-induced structural evolution of silicon- and oxygen-containing hydrogenated amorphous carbon (a-C:H:Si:O) was investigated by X-ray photoelectron and absorption spectroscopy, as well as molecular dynamics (MD) simulations. The spectroscopic results indicate that the introduction of Si and O in hydrogenated amorphous carbon (a-C:H) increases the activation energy for the conversion of sp3- to sp2-bonded C. MD simulations indicate that the higher thermal stability of a-C:H:Si:O compared to a-C:H derives from the lower fraction of strained C-C sp3 bonds in a-C:H:Si:O.

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Filippo Mangolini, James Hilbert, J. Brandon McClimon, Jennifer R. Lukes, Robert W. Carpick. 2017-11-02. Thermally-Induced Structural Evolution of Silicon- and Oxygen-Containing Hydrogenated Amorphous Carbon. https://arxiv.org/abs/1711.00957

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