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arXiv · 1710.08351

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

C. Chèze·F. Feix·J. Lähnemann·T. Flissikowski·O. Brandt·M. Kryśko·P. Wolny·H. Turski·C. Skierbiszewski
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Abstract

N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 {\deg}C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 {\deg}C. This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially homogeneous green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.

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C. Chèze, F. Feix, J. Lähnemann, T. Flissikowski, O. Brandt, M. Kryśko, P. Wolny, H. Turski, C. Skierbiszewski. 2017-10-23. Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature. https://doi.org/10.1063/1.5009184

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