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arXiv · 1710.04812

First-principles study of electric-field-induced topological phase transition in one-bilayer Bi(111)

Hikaru Sawahata·Naoya Yamaguchi·Hiroki Kotaka·Fumiyuki Ishii
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Abstract

Using first-principles calculations, we found the topological phase transition induced by electric fields in one-bilayer Bi(111). The bandgap decreased with increasing electric field strength, and it is closed at 2.1 V/{\AA}. For fields exceeding 2.1 V/{\AA}, the bandgap increased with increasing electric field strength, reaching 0.34 eV at 4.0 V/{\AA}. We computed the $Z_{2}$ invariant that characterizes topological insulator phases. As results, one-bilayer Bi(111) showed a topological phase transition induced by the electric field, from the topological insulator phase to the trivial insulator phase through a Dirac semimetal. This topological phase transition could be applied to novel devices.

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Hikaru Sawahata, Naoya Yamaguchi, Hiroki Kotaka, Fumiyuki Ishii. 2017-10-13. First-principles study of electric-field-induced topological phase transition in one-bilayer Bi(111). https://doi.org/10.7567/jjap.57.030309

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