arXiv · 1710.02243
Tunneling statistics for analysis of spin-readout fidelity
Abstract
We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field where spin-readout is possible. We then show how such a measurement can be used to investigate and optimise single electron spin-readout fidelity.
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Samuel K. Gorman, Yu He, Matthew G. House, Joris G. Keizer, Daniel Keith, Lukas Fricke, Samuel J. Hile, Matthew A. Broome, Michelle Y. Simmons. 2017-10-06. Tunneling statistics for analysis of spin-readout fidelity. https://doi.org/10.1103/physrevapplied.8.034019
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