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arXiv · 1709.09731

Influence of Te-doping on self-catalyzed VS InAs nanowires

Nicholas A. Güsken·Torsten Rieger·Gregor Mussler·Mihail Ion Lepsa·Detlev Grützmacher
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Abstract

We report on growth of Te-doped self-catalyzed InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission electron microscopy as well as X-ray diffraction reveals an enhancement of the zinc blende/(wurtzite+zinc blende) segment ratio if Te is provided during the growth process. Furthermore, electrical two-point measurements show that increased Te-doping causes a gain in conductivity. Two comparable growth series, differing only in As-partial pressure by about $1 \times 10^{-5}$ while keeping all other parameters constant, were analyzed for different Te-doping levels. Their comparison suggests that the crystal structure is stronger affected and the conductivity gain is more distinct for wires grown at a comparably higher As-partial pressure.

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Nicholas A. Güsken, Torsten Rieger, Gregor Mussler, Mihail Ion Lepsa, Detlev Grützmacher. 2017-09-27. Influence of Te-doping on self-catalyzed VS InAs nanowires. https://doi.org/10.1186/s11671-019-3004-0

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