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arXiv · 1709.06842

Electron-phonon interaction and transport properties of metallic bulk and monolayer transition metal dichalcogenide TaS$_2$

Nicki Frank Hinsche·Kristian Sommer Thygesen
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Abstract

Transition metal dichalcogenides have recently emerged as promising two-dimensional materials with intriguing electronic properties. Existing calculations of intrinsic phonon-limited electronic transport so far have concentrated on the semicondcucting members of this family. In this paper we extend these studies by investigating the influence of electron-phonon coupling on the electronic transport properties and band renormalization of prototype inherent metallic bulk and monolayer TaS$_2$. Based on density functional perturbation theory and semi-classical Boltzmann transport calculations, promising room temperature mobilities and sheet conductances are found, which can compete with other established 2D materials, leaving TaS$_2$ as promising material candidate for transparent conductors or as atomically thin interconnects. Throughout the paper, the electronic and transport properties of TaS$_2$ are compared to those of its isoelectronic counterpart TaSe$_2$ and additional informations to the latter are given. We furthermore comment on the conventional su- perconductivity in TaS$_2$, where no phonon-mediated enhancement of TC in the monolayer compared to the bulk state was found.

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Nicki Frank Hinsche, Kristian Sommer Thygesen. 2017-09-20. Electron-phonon interaction and transport properties of metallic bulk and monolayer transition metal dichalcogenide TaS$_2$. https://doi.org/10.1088/2053-1583%2Faa8e6c

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