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arXiv · 1709.03729

Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications

Stylianos A. Kazazis·Elena Papadomanolaki·Eleftherios Iliopoulos
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Abstract

The photovoltaic properties of (0001) n-InGaN/p-GaN single heterojunctions were investigated numerically and compared with those of conventional p-GaN/i-InGaN/n-GaN structures, employing realistic material parameters. This alternative device architecture exploits the large polarization fields, and high efficiency modules are achieved for In-rich, partially relaxed and coherently strained InGaN films. Conversion efficiencies up to 14% under AM1.5G illumination can be reached, revealing the true potential of InGaN single junction solar cells with proper design.

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Stylianos A. Kazazis, Elena Papadomanolaki, Eleftherios Iliopoulos. 2017-09-12. Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications. https://doi.org/10.1109/jphotov.2017.2775164

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