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arXiv · 1709.03049

High pressure growth and electron transport properties of superconducting SmFeAsO1-xHx single crystals

Soshi Iimura·Takashi Muramoto·Satoru Fujitsu·Satoru Matsuishi·Hideo Hosono
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Abstract

We report the single crystal growth and characterization of the highest Tc iron-based superconductor SmFeAsO1-xHx. Some sub-millimeter-sized crystals were grown using the mixture flux of Na3As + 3NaH + As at 3.0 GPa and 1473 K. The chemical composition analyses confirmed 10% substitution of hydrogen for the oxygen site (x = 0.10), however, the structural analyses suggested that the obtained crystal forms a multi-domain structure. By using the FIB technique we fabricated the single domain SmFeAsO0.9H0.10 crystal with the Tc of 42 K, and revealed the metallic conduction in in-plane (rhoab), while semiconducting in the out-of-plane (rhoc). From the in-plane Hall coefficient measurements, we confirmed that the dominant carrier of SmFeAsO0.9H0.10 crystal is an electron, and the hydride ion occupied at the site of the oxygen ion effectively supplies a carrier electron per iron following the equation: O2- = H- + e-.

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Soshi Iimura, Takashi Muramoto, Satoru Fujitsu, Satoru Matsuishi, Hideo Hosono. 2017-09-10. High pressure growth and electron transport properties of superconducting SmFeAsO1-xHx single crystals. https://doi.org/10.1016/j.jascer.2017.06.009

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