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arXiv · 1708.07108

Spincaloritronic signal generation in non-degenerate Si

Naoto Yamashita·Yuichiro Ando·Hayato Koike·Shinji Miwa·Yoshishige Suzuki·Masashi Shiraishi
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Abstract

Spincaloritronic signal generation due to thermal spin injection and spin transport is demonstrated in a non-degenerate Si spin valve. The spin-dependent Seebeck effect is used for the spincaloritronic signal generation, and the thermal gradient of about 200 mK at an interface of Fe and Si enables generating a spin voltage of 8 μV at room temperature. A simple expansion of a conventional spin drift-diffusion model with taking into account the spin-dependent Seebeck effect shows semiconductor materials are quite potential for the spincaloritronic signal generation comparing with metallic materials, which can allow efficient heat recycling in semiconductor spin devices.

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Naoto Yamashita, Yuichiro Ando, Hayato Koike, Shinji Miwa, Yoshishige Suzuki, Masashi Shiraishi. 2017-07-13. Spincaloritronic signal generation in non-degenerate Si. https://doi.org/10.1103/physrevapplied.9.054002

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