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arXiv · 1708.07102

Vertically-Illuminated, Resonant-Cavity-Enhanced, Graphene-Silicon Schottky Photodetectors

M. Casalino·U. Sassi·I. Goykhman·A. Eiden·E. Lidorikis·S. Milana·D. De Fazio·F. Tomarchio·M. Iodice·G. Coppola·A. C. Ferrari
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Abstract

We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. Our devices have wavelength-dependent photoresponse with external (internal) responsivity~20mA/W (0.25A/W). The spectral-selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for free-space optical communications, coherence optical tomography and light-radars

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M. Casalino, U. Sassi, I. Goykhman, A. Eiden, E. Lidorikis, S. Milana, D. De Fazio, F. Tomarchio, M. Iodice, G. Coppola, A. C. Ferrari. 2017-07-08. Vertically-Illuminated, Resonant-Cavity-Enhanced, Graphene-Silicon Schottky Photodetectors. https://doi.org/10.1021/acsnano.7b04792

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