Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Mengxing Wang; Wenlong Cai; Kaihua Cao; Jiaqi Zhou; Jerzy Wrona; Shouzhong Peng; Huaiwen Yang; Jiaqi Wei; Wang Kang; Youguang Zhang; Jürgen Langer; Berthold Ocker; Albert Fert; Weisheng Zhao

doi:10.1038/s41467-018-03140-z

arXiv · 1708.04111

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Mengxing Wang·Wenlong Cai·Kaihua Cao·Jiaqi Zhou·Jerzy Wrona·Shouzhong Peng·Huaiwen Yang·Jiaqi Wei·Wang Kang·Youguang Zhang·Jürgen Langer·Berthold Ocker·Albert Fert·Weisheng Zhao

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Abstract

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 {\Omega}.{\mu}m2, which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high temperature diffusion during annealing. The switching critical current density could be lower than 3.0 MA.cm-2 for devices with a 45 nm radius.

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Mengxing Wang, Wenlong Cai, Kaihua Cao, Jiaqi Zhou, Jerzy Wrona, Shouzhong Peng, Huaiwen Yang, Jiaqi Wei, Wang Kang, Youguang Zhang, Jürgen Langer, Berthold Ocker, Albert Fert, Weisheng Zhao. 2017-08-14. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance. https://doi.org/10.1038/s41467-018-03140-z

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