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arXiv · 1708.03973

229 nm UV LEDs using p-type silicon for increased hole injection

Dong Liu·Sang June Cho·Jeongpil Park·Jung-Hun Seo·Rafael Dalmau·Deyin Zhao·Kwangeun Kim·Munho Kim·In-Kyu Lee·John D. Albrecht·Weidong Zhou·Baxter Moody·Zhenqiang Ma
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Abstract

Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was reported. Both electrical and optical characteristics were measured. Owing to the large concentration of holes from p-Si and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 uW was obtained with corresponding external quantum efficiency of 0.027%. This study demonstrates that by adopting p-type Si nanomembrane contacts as hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

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Dong Liu, Sang June Cho, Jeongpil Park, Jung-Hun Seo, Rafael Dalmau, Deyin Zhao, Kwangeun Kim, Munho Kim, In-Kyu Lee, John D. Albrecht, Weidong Zhou, Baxter Moody, Zhenqiang Ma. 2017-08-13. 229 nm UV LEDs using p-type silicon for increased hole injection. https://doi.org/10.1063/1.5011180

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