Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe

Haiyang Pan; Bingbing Tong; Jihai Yu; Jue Wang; Dongzhi Fu; Shuai Zhang; Bin Wu; Xiangang Wan; Chi Zhang; Xuefeng Wang; Fengqi Song

arXiv · 1708.02779

Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe

Haiyang Pan·Bingbing Tong·Jihai Yu·Jue Wang·Dongzhi Fu·Shuai Zhang·Bin Wu·Xiangang Wan·Chi Zhang·Xuefeng Wang·Fengqi Song

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Abstract

The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising application of unusual magnetoresistance property. In this work, we systematically investigated the anisotropic magnetoresistance in the newly-discovered Dirac node-line material ZrSiSe. By applying a magnetic field of 3 T by a vector field, the three-dimensional (3D) magnetoresistance (MR) shows strong anisotropy. The MR ratio of maximum and minimum directions can reach 7 at 3 T and keeps increasing at the higher magnetic field. The anisotropic MR forms a butterfly-shaped curve, which indicates the quasi-2D electronic structures. This is further confirmed by the angular-dependent Shubnikov-de Haas (SdH) oscillations. The first-principles calculations establish the quasi-2D tubular-shaped Fermi surface near the X point in the Brillouin zone. Our findings shed light on the 3D mapping of MR and the potential applications in magnetic sensors based on ZrSiSe Dirac materials.

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Haiyang Pan, Bingbing Tong, Jihai Yu, Jue Wang, Dongzhi Fu, Shuai Zhang, Bin Wu, Xiangang Wan, Chi Zhang, Xuefeng Wang, Fengqi Song. 2017-08-09. Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe. https://arxiv.org/abs/1708.02779

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