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arXiv · 1707.06731

Mn$_2$VAl Heusler alloy thin films: Appearance of antiferromagnetism and an exchange bias in a layered structure with Fe

Tomoki Tsuchiya·Ryota Kobayashi·Takahide Kubota·Kotaro Saito·Kanta Ono·Takashi Ohhara·Akiko Nakao·Koki Takanashi
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Abstract

Mn$_2$VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L2$_1$ type Mn$_2$VAl order was controlled by the deposition temperatures. A2-type Mn$_2$VAl films showed no spontaneous magnetization and L2$_1$-type Mn$_2$VAl films showed ferrimagnetic behavior with a maximum saturation magnetization of 220 emu/cm$^3$ at room temperature. An antiferromagnetic reflection was observed with neutron diffraction at room temperature for an A2-type Mn$_2$VAl film deposited at 400$^\circ$C. A bilayer sample of the antiferromagnetic A2 Mn$_2$VAl and Fe showed an exchange bias of 120 Oe at 10 K.

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Tomoki Tsuchiya, Ryota Kobayashi, Takahide Kubota, Kotaro Saito, Kanta Ono, Takashi Ohhara, Akiko Nakao, Koki Takanashi. 2017-07-21. Mn$_2$VAl Heusler alloy thin films: Appearance of antiferromagnetism and an exchange bias in a layered structure with Fe. https://doi.org/10.1088/1361-6463%2Faaa41a

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